XPJ10xN0xN8R-G
100V LOW ON-RESISTANCE NCH SHIELDED GATE TRENCH MOSFET
Our new N-channel Shielded Gate Trench (SGT) MOSFET offer superior switching performance and lower reverse recovery charge, for improved low noise switching.
KEY FEATURES:
- Shielded Gate MOSFET Technology
- Lower On-Resistance, Lower Losses
- Lower Reverse Transfer Capacitance
- Very Low Total Gate Charge
- Excellent FOM (Figure-of-Merit) [RON*Qg]
- High Speed Switching with Lower Switching Spike
- Ideal for drive applications that operate on 24V/36V/48V power supplies
- High power package; DFN5060-8L
- Footprint compatible with HSOP8 package
- Smaller than TO263-3(D2PAK) & TO247-3
KEY ELECTRICAL PARAMETERS:
| Drain-Source Voltage VDS | 100 V | |||
| Gate-Source Voltage VGS | ±20 V | |||
| Gate Threshold Voltage VGS(th) | 1.8 V ~ 3.8 V | |||
| ID Max (TC = 25 °C) | 122 A | 61 A | ||
|
On-State Resistance RDS(ON) Max. |
@ VGS=10V | 4.4 mΩ | 9.4 mΩ | |
| @ VGS=6V | 6.5 mΩ | 15.6 mΩ | ||
| Input Capacitance Ciss | 3010 pF | 1370 pF | ||
| Total Gate Charge Qg (Typ.) | 40.5 nC | 19 nC | ||
| FOM (Figure of Merit) | 178.2 mΩ*nC | 178.6 mΩ*nC | ||
| Package | DFN5060-8L | |||
DFN5060-8L PACKAGE & PIN LAYOUT
Only 4.9 x 6.0 x 1.1mm
APPLICATION EXAMPLE: DRIVER CIRCUIT FOR 48V MOTOR
