Our new N-channel Shielded Gate Trench (SGT) MOSFET offer superior switching performance and lower reverse recovery charge, for improved low noise switching.
KEY FEATURES:
KEY ELECTRICAL PARAMETERS:
Drain-Source Voltage VDS | 100 V | |||
Gate-Source Voltage VGS | ±20 V | |||
Gate Threshold Voltage VGS(th) | 1.8 V ~ 3.8 V | |||
ID Max (TC = 25 °C) | 122 A | 61 A | ||
On-State Resistance RDS(ON) Max. |
@ VGS=10V | 4.4 mΩ | 9.4 mΩ | |
@ VGS=6V | 6.5 mΩ | 15.6 mΩ | ||
Input Capacitance Ciss | 3010 pF | 1370 pF | ||
Total Gate Charge Qg (Typ.) | 40.5 nC | 19 nC | ||
FOM (Figure of Merit) | 178.2 mΩ*nC | 178.6 mΩ*nC | ||
Package | DFN5060-8L |
Only 4.9 x 6.0 x 1.1mm