XPJ10xN0xN8R-G

100V LOW ON-RESISTANCE NCH SHIELDED GATE TRENCH MOSFET

 

Our new N-channel Shielded Gate Trench (SGT) MOSFET offer superior switching performance and lower reverse recovery charge, for improved low noise switching.   

 

KEY FEATURES:

  • Shielded Gate MOSFET Technology
    • Lower On-Resistance, Lower Losses
    • Lower Reverse Transfer Capacitance

 

  • Very Low Total Gate Charge
  • Excellent FOM (Figure-of-Merit) [RON*Qg]

 

  • High Speed Switching with Lower Switching Spike
    • Ideal for drive applications that operate on 24V/36V/48V power supplies

 

  • High power package; DFN5060-8L  
    • Footprint compatible with HSOP8 package
    • Smaller than TO263-3(D2PAK) & TO247-3
       

KEY ELECTRICAL PARAMETERS:

 

XPJ101N04N8R-G 

XPJ102N09N8R-G 

Drain-Source Voltage VDS 100 V
Gate-Source Voltage VGS ±20 V
Gate Threshold Voltage VGS(th) 1.8 V ~ 3.8 V
ID Max (TC = 25 °C) 122 A 61 A

On-State Resistance RDS(ON) Max.

@ VGS=10V 4.4 mΩ 9.4 mΩ
@ VGS=6V 6.5 mΩ 15.6 mΩ
Input Capacitance Ciss 3010 pF 1370 pF
Total Gate Charge Qg (Typ.) 40.5 nC 19 nC
FOM (Figure of Merit)   178.2 mΩ*nC 178.6 mΩ*nC
Package DFN5060-8L   

 

DFN5060-8L PACKAGE & PIN LAYOUT

 

 

Only 4.9 x 6.0 x 1.1mm

 

APPLICATION EXAMPLE: DRIVER CIRCUIT FOR 48V MOTOR