Products - Power MOSFETs

XPJ102N09N8R-G N-channel MOSFET 100V, 59A

N-channel MOSFET 100V, 59A image

Specifications


Property XPJ102N09N8R-G
Channel N-Ch (Single)
VDS (MAX.) 100V
ID (MAX.) 59A
RDS (ON) 9.4mΩ (VGS=10V)
Total Gate Charge (Qg) 19nC (VGS=10V)
Ciss 1370pF
Package DFN5060-8L

Product Description


N-channel MOSFET 100V, 9.4mΩ, 59A

The XPJ102N09N8R is a power MOSFET that achieves low on-resistance and high-speed switching characteristics. It can be used in a variety of applications, including DC motors and switching circuits.

Key Features:

  • Shielded Gate MOSFET Technology

            - Lower On-Resistance, Lower Losses

            - Lower Reverse Transfer Capacitance

  • Very Low Total Gate Charge

             - Excellent FOM (Figure-of-Merit) [RON*Qg]

  • High Speed Switching with Lower Switching Spike

            - Ideal for drive applications that operate on 24V/36V/48V power supplies

Available in a DFN5060-8L package (6.0 x 4.9 x h1.1mm)