Property | XPJ102N09N8R-G |
---|---|
Channel | N-Ch (Single) |
VDS (MAX.) | 100V |
ID (MAX.) | 59A |
RDS (ON) | 9.4mΩ (VGS=10V) |
Total Gate Charge (Qg) | 19nC (VGS=10V) |
Ciss | 1370pF |
Package | DFN5060-8L |
N-channel MOSFET 100V, 9.4mΩ, 59A
The XPJ102N09N8R is a power MOSFET that achieves low on-resistance and high-speed switching characteristics. It can be used in a variety of applications, including DC motors and switching circuits.
Key Features:
- Lower On-Resistance, Lower Losses
- Lower Reverse Transfer Capacitance
- Excellent FOM (Figure-of-Merit) [RON*Qg]
- Ideal for drive applications that operate on 24V/36V/48V power supplies
Available in a DFN5060-8L package (6.0 x 4.9 x h1.1mm)