|Vdss (MAX.)||-20 ~ -30V|
|Vgss (MAX.)||±12 ~ 20V|
|Id (MAX.)||-1.5 ~ -2.5A|
|Rds_ON (MAX.)||0.17 ~ 0.45Ω|
|Driving Voltage (MIN.)||-2.5 ~ -4.5V|
The XP162A12A6PR is a P-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. A gate protect diode is built-in to prevent static damage. The small SOT-89 package makes high density mounting possible.