|Vdss (MAX.)||20 ~ 30V|
|Vgss (MAX.)||±8 ~ 20V|
|Id (MAX.)||0.8 ~ 1.0A|
|Rds_ON (MAX.)||0.1 ~ 0.33Ω|
|Driving Voltage (MIN.)||1.5 ~ 4.5V|
The XP151A11B0MR is an N-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. In order to counter static, a gate protect diode is built-in. The small SOT-23 package makes high density mounting possible.
Now also available as Halogen & Antimony Free : XP151A11B0MR-G