Property | XP202A0003PR |
---|---|
Channel | P-ch (Single) |
Vdss (MAX.) | -30V |
Vgss (MAX.) | ±20V |
Id (MAX.) | -5A |
Rds_ON (MAX.) | 0.07Ω |
Driving Voltage (MIN.) | -4.0V |
Packages | SOT-89 |
The XP202A0003PR-G is a P-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. In order to counter static, a gate protect diode is built-in. The small SOT-89 package makes high density mounting possible.
Features:
• Low On-State Resistance
Rds (on) = 47mΩ @ Vgs = -10V
Rds (on) = 70mΩ @ Vgs = -4.5V
• Ultra High-Speed Switching
• Gate Protect Diode Built-in
• Driving Voltage : -4V