Products - P-Channel
XP162A12A6PR P-channel Power MOSFET with low on-state resistance
Specifications
| Property | XP162A12A6PR |
|---|---|
| Channel | P-ch (Single) |
| Vdss (MAX.) | -20 ~ -30V |
| Vgss (MAX.) | ±12 ~ 20V |
| Id (MAX.) | -1.5 ~ -2.5A |
| Rds_ON (MAX.) | 0.17 ~ 0.45Ω |
| Driving Voltage (MIN.) | -2.5 ~ -4.5V |
| Packages | SOT-89 |
Product Description
The XP162A12A6PR is a P-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. A gate protect diode is built-in to prevent static damage. The small SOT-89 package makes high density mounting possible.
Features:
- Low On-State Resistance
- : Rds(on) = 0.17Ω@ Vgs = -4.5V
- : Rds(on) = 0.3Ω@ Vgs = -2.5V
- Ultra High-Speed Switching
- Driving Voltage : -2.5V
- Gate Protect Diode Built-in
