Property | XP263N1001TR |
---|---|
Channel | N-Ch (Single) |
Vdss (MAX.) | 60 |
Vgss (MAX.) | ±20 |
Id (MAX.) | 1 |
Rds_ON (MAX.) | 0.25~0.33Ω |
Driving Voltage (MIN.) | 4.5 |
Packages | SOT-23 |
XP263N1001TR is general-purpose N-channel MOSFET with low on resistance and high speed switching. It can be used for various applications such as relay circuits and switching circuits. The gate protection diode is built-in as a static protection.
Furthermore, series are in a compact SOT-23(TO-236) (2.9 X 2.4 X 1.15mm Height) package with contributing space saving.
Features
On-State ResistanceRDS(on)=0.25Ω @VGS =10V
Driving voltage4.5V
Environmentally FriendlyEU RoHS Compliant, Pb Free