|Vdss (MAX.)||20 ~ 30V|
|Vgss (MAX.)||±8 ~ 20V|
|Id (MAX.)||3 ~ 4A|
|Rds_ON (MAX.)||0.05 ~ 0.18Ω|
|Driving Voltage (MIN.)||1.5 ~ 4.5V|
The XP161A11A1PR is an N-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently setthereby saving energy. A gate protect diode is built-in to prevent static damage. The small SOT-89 package makes high density mounting possible.