Property | XP161A11A1PR |
---|---|
Channel | N-Ch (Single) |
Vdss (MAX.) | 20 ~ 30V |
Vgss (MAX.) | ±8 ~ 20V |
Id (MAX.) | 3 ~ 4A |
Rds_ON (MAX.) | 0.05 ~ 0.18Ω |
Driving Voltage (MIN.) | 1.5 ~ 4.5V |
Packages | SOT-89 |
The XP161A11A1PR is an N-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently setthereby saving energy. A gate protect diode is built-in to prevent static damage. The small SOT-89 package makes high density mounting possible.
Features: