General Description
The XP162A12A6PR is a P-Channel Power MOSFET. It has low on-state resistance, efficient in energy saving and high density mounting characteristics. The IC also has a gate-protect diode built-in to prevent static damage and is available in small SOT-89 package.
Features
- Low On-State Resistance: Rds (on) = 0.17 ohm (Vgs = -4.5V), Rds (on) = 0.3 ohm (Vgs = -2.5V)
- Driving Voltage: -2.5V
- DMOS Structure
- Package: SOP-89
Applications
- Cellular and Portable Phones
- Notebook PCs
- On-Board Power Supplies
- Li-ion Battery Systems
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