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XP162A11C0PR

General Description

The XP162A11C0PR is a P-Channel Power MOSFET with low on-state resistance, efficient in energy saving and high density mounting characteristics. The IC also has a gate-protect diode built-in to prevent static damage and is available in small SOT-89 package.

Features

  • Low On-State Resistance: Rds (on) = 0.15 ohm (Vgs = -10V), Rds (on) = 0.28 ohm (Vgs = -4.5V)
  • Driving Voltage: -4.5V
  • DMOS Structure
  • Package: SOP-23

Applications

  • Cellular and Portable Phones
  • Notebook PCs
  • On-Board Power Supplies
  • Li-ion Battery Systems
 
 

 

 
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