General Description
The XP151A11B0MR is an N-Channel Power MOSFET. A gate protect diode is built in. Its characteristics are low on-state resistance, high speed switching and energy saving. It is available in small SOT-23 package that makes high density mounting possible.
Features
- Low On-State Resistance: Rds (on) = 0.12 ohm (Vgs = 10V), Rds (on) = 0.17 ohm (Vgs = 4.5V)
- Driving Voltage: 4.5V
- DMOS Structure
- Package: SOP-23
Applications
- Cellular and Portable Phones
- Notebook PCs
- On-Board Power Supplies
- Li-ion Battery Systems
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