A radio frequency detector uses a Schottky barrier diode as the detection element. In order to protect this diode against damage caused by the application of excessive power, a NIP diode is connected in shunt with the Schottky barrier diode and is positioned very closely adjacent to it with the connecting leads being as short as possible. The NIP diode has a very low internal capacitance, which is compatible with the operation of the Schottky barrier diode as a radio frequency detector.
A radio frequency detector
Such detectors often use Schottky barrier diodes which can operate satisfactorily at frequencies of several Gigahertz. However, such devices are not capable of handling large power levels and can easily be damaged or destroyed by high voltages or the momentary application of excessive power originating from, for example, pulses or spikes of R.F. power. Protection arrangements which have already been proposed have not been entirely satisfactory, since they either adversely affect the frequency response of the detector or are insufficiently quick acting to protect against very fast voltage spikes.
A radio frequency detector includes a Schottky barrier diode and a further semiconductor diode having a very low internal capacitance and being connected in shunt therewith, the further diode being connected in opposite polarity to that of the Schottky barrier diode and being mounted closely adjacent there to on a common carrier. |
